D. Mitard: search on Z-Library

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1

[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - Variability sources in nanoscale bulk FinFETs and TiTaN- a promising low variability WFM for 7/5nm CMOS nodes

Bhoir, Mandar S., Chiarella, Thomas, Ragnarsson, Lars A., Mitard, Jerome, Horiguchi, Naoto, Mohapatra, Nihar R.

Year:

2019

Language:

english

File:

PDF, 1.39 MB

english, 2019

2

[IEEE 2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2018.12.1-2018.12.5)] 2018 IEEE International Electron Devices Meeting (IEDM) - Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization

Ritzenthaler, R., Mertens, H., Pena, V., Santoro, G., Chasin, A., Kenis, K., Devriendt, K., Mannaert, G., Dekkers, H., Dangol, A., Lin, Y., Sun, S., Chen, Z., Kim, M., Machillot, J., Mitard, J., Yoshi

Year:

2018

File:

PDF, 1.92 MB

2018

3

Short-channel epitaxial germanium pMOS transistors

G. Eneman, B. De Jaeger, G. Wang, J. Mitard, G. Hellings, D.P. Brunco, E. Simoen, R. Loo, M. Caymax, C. Claeys, K. De Meyer, M. Meuris, M.M. Heyns

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 323 KB

english, 2010

4

Review on high-k dielectrics reliability issues

Ribes, G., Mitard, J., Denais, M., Bruyere, S., Monsieur, F., Parthasarathy, C., Vincent, E., Ghibaudo, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2005

Language:

english

File:

PDF, 854 KB

english, 2005

5

[IEEE 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Gainesville, FL, USA (2010.09.28-2010.10.1)] 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Impact of laser anneal thermal budget on the quality of thin SiGe channels with a high Ge content

Rosseel, Erik, Hikavyy, Andriy, Everaert, Jean-Luc, Witters, Liesbeth, Mitard, Jerome, Hoffmann, Thomas, Vandervorst, Wilfried, Pap, A., Pavelka, T.

Year:

2010

Language:

english

File:

PDF, 928 KB

english, 2010

6

[IEEE 2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Reno, NV, USA (2015.9.27-2015.10.2)] 2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - ESD characterization of diodes and ggMOS in Germanium FinFET technologies

Boschke, Roman, Linten, Dimitri, Hellings, Geert, Shih-Hung Chen,, Scholz, Mirko, Mitard, Jerome, Witters, Liesbeth, Collaert, Nadine, Thean, Aaron, Groeseneken, Guido

Year:

2015

Language:

english

File:

PDF, 690 KB

english, 2015

7

Scalability comparison between raised- and embedded-SiGe source/drain structures for Si 0.55 Ge 0.45 implant free quantum well pFET

Yamaguchi, S., Witters, L., Mitard, J., Eneman, G., Hellings, G., Hikavyy, A., Loo, R., Horiguchi, N.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.01 MB

english, 2018

8

A systematic investigation of work function in advanced metal gate–HfO2–SiO2 structures with bevel oxide

Atsushi Kuriyama, Jérôme Mitard, Olivier Faynot, Laurent Brévard, Laurence Clerc, Amélie Tozzo, Vincent Vidal, Simon Deleonibus, Hiroshi Iwai, Sorin Cristoloveanu

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 1012 KB

english, 2007

9

Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs

W. Van Den Daele, C. Le Royer, E. Augendre, J. Mitard, G. Ghibaudo, S. Cristoloveanu

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.84 MB

english, 2011

10

Si versus Ge for future microelectronics

C. Claeys, J. Mitard, G. Eneman, M. Meuris, E. Simoen

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1.44 MB

english, 2010

11

Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs

E. Simoen, A. Firrincieli, F. Leys, R. Loo, B. De Jaeger, J. Mitard, C. Claeys

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 801 KB

english, 2010

12

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks

G. Reimbold, J. Mitard, X. Garros, C. Leroux, G. Ghibaudo, F. Martin

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 816 KB

english, 2007

13

The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures

Geert Hellings, Andriy Hikavyy, Jerome Mitard, Liesbeth Witters, Brahim Benbakhti, AliReza Alian, Niamh Waldron, Hugo Bender, Geert Eneman, Raymond Krom, Andreas Schulze, Wilfried Vandervorst, Roger L

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 1.80 MB

english, 2012

14

Layout Scaling of pFETs

Eneman, G., Yamaguchi, S., Ortolland, C., Takeoka, S., Kobayashi, M., Witters, L., Hikavyy, A., Mitard, J., Loo, R., Hoffmann, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.32 MB

english, 2011

15

[IEEE 2011 IEEE International Symposium on Circuits and Systems (ISCAS) - Rio de Janeiro, Brazil (2011.05.15-2011.05.18)] 2011 IEEE International Symposium of Circuits and Systems (ISCAS) - Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling

Crupi, Felice, Alioto, Massimo, Franco, Jacopo, Magnone, Paolo, Kaczer, Ben, Groeseneken, Guido, Mitard, Jerome, Witters, Liesbeth, Hoffmann, Thomas Y.

Year:

2011

Language:

english

File:

PDF, 343 KB

english, 2011

16

Integration aspects of strained Ge pFETs

Witters, L., Eneman, G., Mitard, J., Vincent, B., Hikavyy, A., Milenin, A.P., Mertens, S., Thean, A., Collaert, N.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.75 MB

english, 2014

17

“Y function” method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction

Diouf, C., Cros, A., Monfray, S., Mitard, J., Rosa, J., Gloria, D., Ghibaudo, G.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 907 KB

english, 2013

18

(Invited) Stress Simulations of Si- and Ge-Channel FinFETs for the 14 nm-Node and Beyond

Eneman, G., Brunco, D. P., Witters, L., Vincent, B., Favia, P., Hikavyy, A., De Keersgieter, A., Mitard, J., Loo, R., Veloso, A., Richard, O., Bender, H., Vandervorst, W., Caymax, M., Horiguchi, N., C

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 344 KB

english, 2013

19

Stress Techniques and Mobility Enhancement in FinFET Architectures

Eneman, G., Witters, L., Mitard, J., Hellings, G., De Keersgieter, A., Brunco, D. P., Hikavyy, A., Vincent, B., Simoen, E., Favia, P., Bender, H., Veloso, A., Chiarella, T., Boccardi, G., Kim, M., Tog

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 579 KB

english, 2013

20

[IEEE 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, China (2013.07.15-2013.07.19)] Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: Challenges and solutions

Groeseneken, G., Aoulaiche, M., Cho, M., Franco, J., Kaczer, B., Kauerauf, T., Mitard, J., Ragnarsson, Lars-Ake, Roussel, P., Toledano-Luque, M.

Year:

2013

File:

PDF, 1.02 MB

2013

21

[IEEE 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Brugge, Belgium (2009.09.14-2009.09.18)] 2009 European Conference on Radiation and Its Effects on Components and Systems - Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

Arora, Rajan, Mitard, Jerome, Madan, Anuj, Simoen, Eddy, Zhang, Enxia X., Fleetwood, Daniel M., Choi, Bo K., Schrimpf, Ronald D., Galloway, Kenneth F., Kulkarni, Shrinivas R., Meuris, Marc, Claeys, Co

Year:

2009

Language:

english

File:

PDF, 2.33 MB

english, 2009

22

Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects

Simoen, Eddy, Lin, Dennis Han-Chung, Alian, A., Brammertz, G., Merckling, C., Mitard, J., Claeys, Cor

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.02 MB

english, 2013

23

NBTI Reliability of SiGe and Ge Channel pMOSFETs With $ \hbox{SiO}_{2}/\hbox{HfO}_{2}$ Dielectric Stack

Franco, Jacopo, Kaczer, Ben, Mitard, Jerome, Toledano-Luque, Maria, Roussel, Philippe J., Witters, Liesbeth, Grasser, Tibor, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.74 MB

english, 2013

24

[IEEE 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. - Shangri-La's Rasa Sentosa Resort, Singapore (27 June-1July, 2005)] Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. - Trapping and detrapping kinetics in metal gate/HfO/sub 2/ stacks

Mitard, J., Leroux, C., Ghibaudo, G., Reimbold, G., Garros, X., Guillaumot, B., Boulanger, F.

Year:

2005

Language:

english

File:

PDF, 412 KB

english, 2005

25

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Dual-channel technology with cap-free single metal gate for high performance CMOS in gate-first and gate-last integration

Witters, L., Mitard, J., Veloso, A., Hikavyy, A., Franco, J., Kauerauf, T., Cho, M., Schram, T., Sebai, F., Yamaguchi, S., Takeoka, S., Fukuda, M., Wang, W.-E., Duriez, B., Eneman, G., Loo, R., Kellen

Year:

2011

Language:

english

File:

PDF, 630 KB

english, 2011

26

[IEEE 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - South Lake Tahoe, CA, USA (2014.10.12-2014.10.16)] 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs

Franco, J., Kaczer, B., Roussel, J., Cho, M., Grasser, T., Mitard, J., Arimura, H., Witters, L., Cott, D., Waldron, N., Zhou, D., Vais, A., Lin, D., Alian, A., Pourghaderi, M. A., Martens, K., Sioncke

Year:

2014

Language:

english

File:

PDF, 791 KB

english, 2014

27

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment

Waldron, Niamh, Nguyen, Ngoc Duy, Lin, Dennis, Brammertz, Guy, Vincent, Benjamin, Firrincieli, Andrea, Winderick, Gillis, Sioncke, Sonja, De Jaeger, Brice, Wang, Gang, Mitard, Jerome, Wang, Wei-E, Hey

Year:

2011

Language:

english

File:

PDF, 1.28 MB

english, 2011

28

[IEEE 2015 Symposium on VLSI Technology - Kyoto, Japan (2015.6.16-2015.6.18)] 2015 Symposium on VLSI Technology (VLSI Technology) - Characterization of self-heating in high-mobility Ge FinFET pMOS devices

Bury, E., Kaczer, B., Mitard, J., Collaert, N., Khatami, N.S., Aksamija, Z., Vasileska, D., Raleva, K., Witters, L., Hellings, G., Linten, D., Groeseneken, G., Thean, A.

Year:

2015

Language:

english

File:

PDF, 1.01 MB

english, 2015

29

Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

Zhang, En Xia, Fleetwood, Daniel M., Hachtel, Jordan A., Liang, Chundong, Reed, Robert A., Alles, Michael L., Schrimpf, Ronald D., Linten, Dimitri, Mitard, Jerome, Chisholm, Matthew F., Pantelides, So

Journal:

IEEE Transactions on Nuclear Science

Year:

2017

Language:

english

File:

PDF, 583 KB

english, 2017

30

[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Towards optimal ESD diodes in next generation bulk FinFET and GAA NW technology nodes

Chen, S.-H., Hellings, G., Linten, D., Chiarella, T., Mertens, H., Boschke, R., Mitard, J., Kubicek, S., Ritzenthaler, R., Bury, E., Wang, N., Groeseneken, G., Mocuta, A., Horiguchi, N.

Year:

2017

Language:

english

File:

PDF, 1013 KB

english, 2017

31

[IEEE 2017 Symposium on VLSI Technology - Kyoto, Japan (2017.6.5-2017.6.8)] 2017 Symposium on VLSI Technology - Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability

Arimura, H., Witters, L., Cott, D., Dekkers, H., Loo, R., Mitard, J., Ragnarsson, L.-A., Wostyn, K., Boccardi, G., Chiu, E., Subirats, A., Favia, P., Vancoille, E., De Heyn, V., Mocuta, D., Collaert,

Year:

2017

Language:

english

File:

PDF, 462 KB

english, 2017

32

[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - 3D-carrier Profiling and Parasitic Resistance Analysis in Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors

Eyben, P., Machillot, J., Kim, M., Miyashita, T., Yoshida, N., Bender, H., Richard, O., Paredis, K., Wouters, L., Mitard, J., Horiguchi, N., Ritzenthaler, R., De Keersgieter, A., Celano, U., Chiarella

Year:

2019

Language:

english

File:

PDF, 1.74 MB

english, 2019

33

[IEEE 2019 Symposium on VLSI Technology - Kyoto, Japan (2019.6.9-2019.6.14)] 2019 Symposium on VLSI Technology - A record Gm SAT /SS SAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

Arimura, H., Cott, D., Boccardi, G., Loo, R., Wostyn, K., Brus, S., Capogreco, E., Opdebeeck, A., Witters, L., Conard, T., Suhard, S., Van Dorp, D., Kenis, K., Ragnarsson, L.-A., Mitard, J., Holsteyns

Year:

2019

Language:

english

File:

PDF, 2.38 MB

english, 2019

34

Morphology and growth of Aspergillus niger ATCC 26036 cultivated at several shear rates

A. Mitard, J. P. Riba

Journal:

Biotechnology and Bioengineering

Year:

1988

Language:

english

File:

PDF, 2.17 MB

english, 1988

35

On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs

J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, P. Hehenberger, T. Grasser, J. Mitard, G. Eneman, L. Witters, T.Y. Hoffmann, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 1.37 MB

english, 2011

36

Investigation on trapping and detrapping mechanisms in HfO2 films

J. Mitard, C. Leroux, G. Ghibaudo, G. Reimbold, X. Garros, B. Guillaumot, F. Boulanger

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 419 KB

english, 2005

37

Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs

B. Kaczer, J. Franco, J. Mitard, Ph. J. Roussel, A. Veloso, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 391 KB

english, 2009

38

Performance enhancement in Ge pMOSFETs with orientation fabricated with a Si-compatible process flow

S. Dutta Gupta, J. Mitard, G. Eneman, B. De Jaeger, M. Meuris, M.M. Heyns

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 911 KB

english, 2010

39

Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

E. Simoen, G. Brouwers, G. Eneman, M. Bargallo Gonzalez, B. De Jaeger, J. Mitard, D.P. Brunco, L. Souriau, N. Cody, S. Thomas, M. Meuris

Journal:

Materials Science in Semiconductor Processing

Year:

2008

Language:

english

File:

PDF, 298 KB

english, 2008

40

Claudication fessière du fait d'une thrombose à la naissance de l'artère glutéale supérieure : un cas diagnostiqué seulement sur l'artériographie sélective de l'iliaque interne, puis guéri par la pose d'un stent par voie transcutanée

Jean-Marie Berthelot, Jean-Christophe Pillet, Daniel Mitard, Florence Chevalet-Muller, Bernard Planchon, Yves Maugars

Journal:

Revue du Rhumatisme

Year:

2007

Language:

french

File:

PDF, 247 KB

french, 2007

41

Claudication fessière sévère du fait d'une thrombose à la naissance de l'artère glutéale supérieure : à propos d'un cas méconnu en angio-IRM et diagnostiqué seulement sur l'artériographie sélective de l'iliaque interne

J.-M. Berthelot, J.-C. Pillet, D. Mitard, F. Chevalet-Muller, Y. Maugars

Journal:

Revue du Rhumatisme

Year:

2006

Language:

french

File:

PDF, 80 KB

french, 2006

42

Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?

Eddy Simoen, Gijs Brouwers, Rui Yang, Geert Eneman, Mireia Bargallo Gonzalez, Frederick Leys, Brice De Jaeger, Jerome Mitard, David Brunco, Laurent Souriau, Nyles Cody, Shawn Thomas, Luc Lajaunie, Mar

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 450 KB

english, 2009

43

Rheological properties ofAspergillus nigerpellet suspensions

A. Mitard, J. P. Riba

Journal:

Applied Microbiology and Biotechnology

Year:

1986

Language:

english

File:

PDF, 323 KB

english, 1986

44

Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions

B. Vincent, R. Loo, W. Vandervorst, J. Delmotte, B. Douhard, V.K. Valev, M. Vanbel, T. Verbiest, J. Rip, B. Brijs, T. Conard, C. Claypool, S. Takeuchi, S. Zaima, J. Mitard, B. De Jaeger, J. Dekoster,

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.03 MB

english, 2011

45

Anatomie de l'Espace Epidural et ses implications dans le traitement de la douleur

Y. Lajat, M. Bensignor le Henaff, D. Heyman, D. Menegalli-Boggelli, D. Mitard, F. Resche

Journal:

Douleur et Analgésie

Year:

1994

File:

PDF, 324 KB

1994

46

Buttock claudication disclosing a thrombosis of the superior left gluteal artery: Report of a case diagnosed by a selective arteriography of the iliac artery, and cured by per-cutaneous stenting

Jean-Marie Berthelot, Jean-Christophe Pillet, Daniel Mitard, Florence Chevalet-Muller, Bernard Planchon, Yves Maugars

Journal:

Joint Bone Spine

Year:

2007

Language:

english

File:

PDF, 233 KB

english, 2007

47

Carrier transport in HfO2/metal gate MOSFETs: physical insight into critical parameters

Casse, M., Thevenod, L., Guillaumot, B., Tosti, L., Martin, F., Mitard, J., Weber, O., Andrieu, F., Ernst, T., Reimbold, G., Billon, T., Mouis, M., Boulanger, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 679 KB

english, 2006

48

Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

Maji, D., Crupi, F., Amat, E., Simoen, E., De Jaeger, B., Brunco, D.P., Manoj, C.R., Rao, V.R., Magnone, P., Giusi, G., Pace, C., Pantisano, L., Mitard, J., Rodriguez, R., Nafria, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 344 KB

english, 2009

49

Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology

Eneman, G., De Jaeger, B., Simoen, E., Brunco, D.P., Hellings, G., Mitard, J., De Meyer, K., Meuris, M., Heyns, M.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1016 KB

english, 2009

50

Electrical TCAD Simulations of a Germanium pMOSFET Technology

Hellings, G., Eneman, G., Krom, R., De Jaeger, B., Mitard, J., De Keersgieter, A., Hoffmann, T., Meuris, M., De Meyer, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.09 MB

english, 2010

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